All Silicon Microdisplay Fabricated Utilizing 0.18 ?m CMOS-IC With Monolithic Integration

نویسندگان

چکیده

A low voltage all silicon microdisplay is presented based on MOS-like gate-control all-Silicon light-emitting diode (LED) in standard 0.18 ?m complementary metal oxide semiconductor (CMOS) technology. The LED designed under a PN alternate structure with polysilicon gate control electrode for high luminous intensity and operating voltage. device fabricated the as pixel units. size of proposed 6.2 mm × 5.0 about 368 mW/mm2 at stable 1.8 V.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Monolithic integration of a plasmonic sensor with CMOS technology

Monolithic integration of nanophotonic sensors with CMOS detectors can transform the laboratory based nanophotonic sensors into practical devices with a range of applications in everyday life. In this work, by monolithically integrating an array of gold nanodiscs with the CMOS photodiode we have developed a compact and miniaturized nanophotonic sensor system having direct electrical read out. D...

متن کامل

Monolithic optical link in silicon-on-insulator CMOS technology.

This work presents a monolithic laterally-coupled wide-spectrum (350 nm < λ < 1270 nm) optical link in a silicon-on-insulator CMOS technology. The link consists of a silicon (Si) light-emitting diode (LED) as the optical source and a Si photodiode (PD) as the detector; both realized by vertical abrupt n+p junctions, separated by a shallow trench isolation composed of silicon dioxide....

متن کامل

Low-Noise Silicon Avalanche Photodiodes Fabricated in Conventional CMOS Technologies

We present a simple design technique that allows the fabrication of UV/blueselective avalanche photodiodes in a conventional CMOS process. The photodiodes are fabricated in a twin tub 0.8 m CMOS technology. An efficient guard-ring structure is created using the lateral diffusion of two n-well regions separated by a gap of 0.6 m. When operated at a multiplication gain of 20, our photodiodes achi...

متن کامل

A silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product.

We present a silicon avalanche photodetector (APD) fabricated with standard complementary metal-oxide-semiconductor (CMOS) technology without any process modification or special substrates. The CMOS-APD is based on N+/P-well junction, and its current-voltage characteristics, responsivity, avalanche gain, and photodetection frequency response are measured. Gain-bandwidth product over 1 THz is ac...

متن کامل

Low-loss and low-crosstalk 8 × 8 silicon nanowire AWG routers fabricated with CMOS technology.

Low-loss and low-crosstalk 8 × 8 arrayed waveguide grating (AWG) routers based on silicon nanowire waveguides are reported. A comparative study of the measurement results of the 3.2 nm-channel-spacing AWGs with three different designs is performed to evaluate the effect of each optimal technique, showing that a comprehensive optimization technique is more effective to improve the device perform...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: IEEE Photonics Journal

سال: 2022

ISSN: ['1943-0655', '1943-0647']

DOI: https://doi.org/10.1109/jphot.2022.3160226